bss138n sipmos ? small-signal-transistor features ? n-channel ? enhancement mode ? logic level ? d v /d t rated ? pb-free lead-plating; rohs compliant ? qualified according to aec q101 ? halogen free according to iec61249-2-21 v ds 60 v r ds(on),max 3.5 i d 0.23 a product summary pg-sot-23 type package tape and reel marking bss138n pg-sot-23 h6327: 3000 sks bss138n pg-sot-23 h6433: 10000 sks rev. 2.86 page 1 2012-04-17 parameter symbol conditions unit continuous drain current i d t a =25 c 0.23 a t a =70 c 0.18 pulsed drain current i d,pulse t a =25 c 0.92 reverse diode d v /d t d v /d t i d =0.23 a, v ds =48 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v esd sensitivity jesd22-a114 (hbm) class 0 (<250v) power dissipation p tot t a =25 c 0.36 w operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 value rev. 2.86 page 1 2012-04-17
bss138n parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - minimal footprint r thja - - 350 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs = 0 v, i d =250 a 60 - - v gate threshold voltage v gs(th) v gs =v ds , i d =26 a 0.6 1.0 1.4 drain-source leakage current i d (off) v ds =60 v, v gs =0 v, t j =25 c - - 0.1 a v ds =60 v, v gs =0 v, t j =150 c --5 values rev. 2.86 page 2 2012-04-17 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 10 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =0.03 a - 3.3 4.0 v gs =4.5 v, i d =0.19 a - 3.5 6.0 v gs =10 v, i d =0.23 a - 2.2 3.5 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =0.18 a 0.1 0.2 - s rev. 2.86 page 2 2012-04-17
bss138n parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss -3241pf output capacitance c oss - 7.2 9.5 reverse transfer capacitance c rss - 2.8 3.8 turn-on delay time t d(on) - 2.3 3.5 ns rise time t r - 3.0 4.5 turn-off delay time t d(off) - 6.7 10 fall time t f - 8.2 12.3 gate charge characteristics gate to source charge q gs - 0.10 0.14 nc gate to drain charge q gd - 0.3 0.4 gate charge total q g - 1.0 1.4 gate plateau voltage v plateau - 3.3 - v values v gs =0 v, v ds =25 v, f =1 mhz v dd =30 v, v gs =10 v, i d =0.23 a, r g =6 v dd =48 v, i d =0.23 a, v gs =0 to 10 v rev. 2.86 page 3 2012-04-17 reverse diode diode continous forward current i s - - 0.23 a diode pulse current i s,pulse - - 0.92 diode forward voltage v sd v gs =0 v, i f =0.23 a, t j =25 c - 0.83 1.2 v reverse recovery time t rr - 9.1 14.5 ns reverse recovery charge q rr - 3.3 5 nc v r =30 v, i f =0.23 a, d i f /d t =100 a/s t a =25 c rev. 2.86 page 3 2012-04-17
bss138n 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); v gs 10 v 0 0.1 0.2 0.3 0.4 0 40 80 120 160 p tot [w] t a [c] 0 0.05 0.1 0.15 0.2 0.25 0 40 80 120 160 i d [a] t a [c] rev. 2.86 page 4 2012-04-17 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c; d =0 z thja =f( t p ) parameter: t p parameter: d = t p / t 100 ms 10 s 100 s 1 ms 10 ms dc 10 -3 10 -2 10 -1 10 0 10 1 1 10 100 i d [a] v ds [v] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 z thja [k/w] t p [s] 0 0.1 0.2 0.3 0.4 0 40 80 120 160 p tot [w] t a [c] 0 0.05 0.1 0.15 0.2 0.25 0 40 80 120 160 i d [a] t a [c] rev. 2.86 page 4 2012-04-17
bss138n 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 2.9 v 3.2 v 3.5 v 4 v 4.5 v 5 v 7 v 10 v 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 r ds(on) [ ] i d [a] 2.9 v 3.2 v 3.5 v 4 v 4.5 v 5 v 7 v 10 v 0 0.1 0.2 0.3 0.4 0.5 0.6 012345 i d [a] v ds [v] rev. 2.86 page 5 2012-04-17 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c 2.9 v 3.2 v 3.5 v 4 v 4.5 v 5 v 7 v 10 v 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 r ds(on) [ ] i d [a] 0 0.1 0.2 0.3 0.4 0.5 0.6 012345 i d [a] v gs [v] 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00 0.10 0.20 0.30 0.40 g fs [s] i d [a] 2.9 v 3.2 v 3.5 v 4 v 4.5 v 5 v 7 v 10 v 0 0.1 0.2 0.3 0.4 0.5 0.6 012345 i d [a] v ds [v] rev. 2.86 page 5 2012-04-17
bss138n 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =0.23 a; v gs =10 v v gs(th) =f( t j ); v ds =v gs ; i d =26 a parameter: i d typ 98 % 0 2 4 6 8 -60 -20 20 60 100 140 r ds(on) [ ] t j [c] typ 98 % 2 % 0 0.4 0.8 1.2 1.6 2 -60 -20 20 60 100 140 v gs(th) [v] t j [c] rev. 2.86 page 6 2012-04-17 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz; t j =25c i f =f( v sd ) parameter: t j typ 98 % 0 2 4 6 8 -60 -20 20 60 100 140 r ds(on) [ ] t j [c] typ 98 % 2 % 0 0.4 0.8 1.2 1.6 2 -60 -20 20 60 100 140 v gs(th) [v] t j [c] ciss coss crss 10 0 10 1 10 2 0 102030 c [pf] v ds [v] 25 c 150 c 25 c, 98% 150 c, 98% 10 -3 10 -2 10 -1 10 0 00.40.81.21.622.4 i f [a] v sd [v] rev. 2.86 page 6 2012-04-17
bss138n 13 typ. gate charge 14 drain-source breakdown voltage v gs =f( q gate ); i d =0.23 a pulsed v br(dss) =f( t j ); i d =250 a parameter: v dd 50 55 60 65 70 -60 -20 20 60 100 140 180 v br(dss) [v] t j [c] 12 v 30 v 48 v 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 v gs [v] q gate [nc] rev. 2.86 page 7 2012-04-17 50 55 60 65 70 -60 -20 20 60 100 140 180 v br(dss) [v] t j [c] 12 v 30 v 48 v 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 v gs [v] q gate [nc] rev. 2.86 page 7 2012-04-17
bss138n packa g e outline: footprint: packaging: rev. 2.86 page 8 2012-04-17 dimensions in mm rev. 2.86 page 8 2012-04-17
bss138n published by infineon technologies ag bereich kommunikation st.-martin-stra?e 53 d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements, components may contain dangerous substances. rev. 2.86 page 9 2012-04-17 yg for information on the types in question, please contact your nearest infineon technologies office. infineon technologies' components may only be used in life-support devices or systems with the expressed written approval of infineon technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.86 page 9 2012-04-17
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